SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-22...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220 package ·Low collector saturation
voltage ·Wide safe operating area APPLICATIONS ·For medium power switching and amplifier applications such as:series and shunt regulators and driver and output stages of high-fidelity
amplifiers
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
2N6291 2N6293
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO PARAMETER 2N6291 Collector-base
voltage 2N6293 2N6291 VCEO VEBO IC IB PT Tj Tstg Collector-emitter
voltage 2N6293 Emitter-base
voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 70 5 7 3 40 150 -65~150 V A A W Open emitter 80 50 V CONDITIONS VALUE 60 V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3.125 UNIT /W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining
voltage 2N6291 IC=0.1A ;IB=0 2N6293 2N6291 2N6293 IC=2.5A;IB=0.25A CONDITIONS SYMBOL
2N6291 2N6293
MIN 50
TYP.
MAX
UNIT
VCEO(SUS)
V 70
VCEsat-1
Collector-emitter saturation
voltage
1.0 IC=2A;IB=0.2A IC=7A;IB=3A IC=2.5A ; VCE=4V 1.5 2N6293 IC=2A ; VCE=4V IC=7A ; VCE=4V 2N6291 2N6293 2N6291 2N6293 VCE=40V; IB=0 1.0 VCE=60V; IB=0 VCE=56V; VBE=-1.5V VCE=50V; BE=-...