2N6312

2N4231A 2N4232A 2N4233A NPN 2N6312 2N6313 2N6314 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4231A, 2N6312 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 2N4231A 2N4232A 2N4233A SYMBOL 2N6312 2N6313 2N6314 VCBO 40 60 80 VCEO 40 60 80 VEBO 5.0 IC 5.0 ICM 10 IB 2.0 PD 75 TJ, Tstg -65 to +200 JC 2.32 UNITS V V V A A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEO VCE=30V (2N4231A, 2N6312) ICEO VCE=50V (2N4232A, 2N6313) ICEO VCE=70V (2N4233A, 2N6314) ICEV VCE=Rated VCEO, VBE=1.5V ICEV VCE=Rated VCEO, VBE=1.5V, TC=150°C IEBO VEB=5.0V BVCEO IC=100mA, (2N4231A, 2N6312) 40 BVCEO IC=100mA, (2N4232A, 2N6313) 60 BVCEO IC=100mA, (2N4233A, 2N6314) 80 VCE(SAT) IC=1.5A, IB=0.15A VCE(SAT) IC=3.0A, IB=0.3A VCE(SAT) IC=5.0A, IB=1.25A VBE(ON) VCE=2.0V, IC=1.5A hFE VCE=2.0V, IC=0.5A 40 hFE VCE=2.0V, IC=1.5A 25 hFE VCE=2.0V, IC=3.0A 10 hFE VCE=4.0V, IC=5.0A 4.0 hfe VCE=10V, IC=...