2N6373

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for switching and wide-band amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6372 2N6373 2N6374 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6372 VCBO Collector-base voltage 2N6373 2N6374 2N6372 VCEO Collector-emitter voltage 2N6373 2N6374 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 90 70 50 80 60 40 6 6 40 150 -65~200 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6372 VCEO(SUS) Collector-emitter sustaining voltage 2N6373 2N6374 VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage 2N6372 ICEO Collector cut-off current 2N6373 2N6374 ICBO IEBO Collector cut-off current Emitter cut-off current 2N6372 hFE DC current gain 2N6373 2N6374 fT Transition frequency IC=2A; IB=0.2A IC=6A; IB=0.6A IC=2A; IB=0.2A ...