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2N6374 Datasheet

Part Number 2N6374
Manufacturers SavantIC
Logo SavantIC
Description (2N6372 - 2N6374) Silicon Power Transistor
Datasheet 2N6374 Datasheet2N6374 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for switching and wide-band amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6372 2N6373 2N6374 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6372 VCBO Collector-base voltage 2N6373 2N6374 2N6372 VCEO Co.

  2N6374   2N6374






Part Number 2N6374
Manufacturers Central Semiconductor Corp
Logo Central Semiconductor Corp
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet 2N6374 Datasheet2N6374 Datasheet (PDF)

2N5954 2N5955 2N5956 PNP 2N6372 2N6373 2N6374 NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5954 and 2N6372 series devices are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Em.

  2N6374   2N6374







Part Number 2N6374
Manufacturers Seme LAB
Logo Seme LAB
Description Bipolar NPN Device
Datasheet 2N6374 Datasheet2N6374 Datasheet (PDF)

2N6374 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. Bipolar NPN Device. VCEO = 50V IC = 6A 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) All Semelab hermetically sealed products can be processed in accordance with the requiremen.

  2N6374   2N6374







(2N6372 - 2N6374) Silicon Power Transistor

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for switching and wide-band amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6372 2N6373 2N6374 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6372 VCBO Collector-base voltage 2N6373 2N6374 2N6372 VCEO Collector-emitter voltage 2N6373 2N6374 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 90 70 50 80 60 40 6 6 40 150 -65~200 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6372 VCEO(SUS) Collector-emitter sustaining voltage 2N6373 2N6374 VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage 2N6372 ICEO Collector cut-off current 2N6373 2N6374 ICBO IEBO Collector cut-off current Emitter cut-off current 2N6372 hFE DC current gain 2N6373 2N6374 fT Transition frequency IC=2A; IB=0.2A IC=6A; IB=0.6A IC=2A; IB=0.2A .


2009-02-02 : WT5041    WT5058    WT5081    WT5082    STK430II    2N6360    2N6372    2N6385    2N6383    2N6384   


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