2N6551 2N6552 2N6553 NPN 2N6554 2N6555 2N6556 PNP
COMPLEMENTARY SILICON TRANSISTORS
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2N6551 2N6552 2N6553 NPN 2N6554 2N6555 2N6556 PNP
COMPLEMENTARY SILICON TRANSISTORS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6551, 2N6554 series types are complementary silicon transistors manufactured by the epitaxial planar process, designed for general purpose audio amplifier applications.
MARKING: FULL PART NUMBER
TO-202 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance
SYMBOL VCBO VCEO VEBO IC ICM IB PD PD TJ, Tstg ΘJA ΘJC
2N6551 2N6552 2N6553
2N6554 2N6555 2N6556
60
80
100
60
80
100
5.0
1.0
2.0
0.1
2.0
10
-65 to +150
62.5
12.5
UNITS V V V A A A W W °C
°C/W °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL
TEST CONDITIONS
ICBO
VCB=40V
ICBO
VCB=60V
ICBO
VCB=80V
IEBO
VEB=4.0V
BVCBO
lC=100μA
BVCEO
lC=1.0mA
BVEBO
lE=100μA
VCE(SAT)
lC=250mA, IB=10mA
VCE(SAT)
lC=1.0A, IB=100mA
VBE(ON)
VCE=5.0V, IC=250mA
hFE
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=50mA
hFE
VCE=1.0V, IC=250mA
hFE
VCE=1.0V, IC=500mA
fT
VCE=5.0V, lC=100mA, f=20MHz
Cob
VCB=20V, lE=0, f=1.0MHz
2N6551 2N6554 MIN MAX - 100 --- 100 60 60 5.0 - 0.5 - 1.0 - 1.2 60 80 300 60 25 75 375 - 18
2N6552 2N6555 MIN MAX -- 100 -- 100 80 80 5.0 - 0.5 - 1.0 - 1.2 60 80 300 60 25 75 375 - 18
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