2N6668

2N6668 SILICON PNP POWER DARLINGTON TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: GENERAL PURPOSE SWITCHING s GENERAL PURPOSE SWITCHING AND AMPLIFIER s 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM R1(typ) = 8 kΩ R2(typ) = 120 Ω ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value 80 80 5 10 15 250 65 -65 to 150 150 Unit V V V A A mA W o o C C For PNP type voltage and current values are negative. July 1997 1/4 2N6668 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.92 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEO I EBO I CEV Parameter Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Collector Cut-off Current (V EB = -1.5V) Test Conditions V CE = 80 V V EB = 5 V V CE = 80 V I C = 200 mA 80 Min. Typ. Max. 1 5 300 Unit mA mA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B =0) V CE(sat) ∗ V BE(sat) ∗ h FE ∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain IC = 5 A I C = 10 A IC = 5 A I C = 10 A IC = 5 A I C = 10 A I B = 0.01 A I...