2N6674 2N6675
NPN SILICON POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR ...
2N6674 2N6675
NPN SILICON POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6674, 2N6675 types are NPN Silicon Triple Diffused Mesa Power Transistors designed for high
voltage switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Emitter
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCEV VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC
2N6674 450
2N6675 650
300 400
7.0
15
20
5.0
175
-65 to +200
1.0
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEV, VBE=1.5V
ICEV
VCE=Rated VCEV, VBE=1.5V, TC=100°C
IEBO
VEB=7.0V
BVCEO IC=200mA (2N6674)
300
BVCEO IC=200mA (2N6675)
400
VCE(SAT) IC=10A, IB=2.0A
VCE(SAT) IC=10A, IB=2.0A, TC=100°C
VCE(SAT) IC=15A, IB=5.0A
VB...
