2N6784

www.DataSheet4U.com 2N6784 Data Sheet December 2001 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET [ /Title (2N67 84) /Subject (2.25A , 200V, 1.500 Ohm, NChannel Power MOSFET) /Autho r () The 2N6784 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Features 2.25A, 200V rDS(ON) = 1.500Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Ordering Information PART NUMBER 2N6784 PACKAGE TO-205AF BRAND 2N6784 Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE ©2001 Fairchild Semiconductor Corporation 2N6784 Rev. B 2N6784 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified 2N6784 200 200 2.25 1.5 9 ±20 2.25 9 15 0.12 -55 to 150 300 260 UNITS V V A A A V A A W W/oC oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Co...