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2N6798 Datasheet

Part Number 2N6798
Manufacturers Seme LAB
Logo Seme LAB
Description N-CHANNEL ENHANCEMENT MODE TRANSISTOR
Datasheet 2N6798 Datasheet2N6798 Datasheet (PDF)

2N6798 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . FEATURES 5 .0 8 (0 .2 0 0 ) ty p . • V(BR)DSS = 200V 2 .5 4 (0 .1 0 0 ) 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3 • ID = 5.5A • RDSON = 0.40W 4 5 ° TO.

  2N6798   2N6798






Part Number 2N6798
Manufacturers Microsemi
Logo Microsemi
Description N-CHANNEL MOSFET
Datasheet 2N6798 Datasheet2N6798 Datasheet (PDF)

2N6796, 2N6798, 2N6800, 2N6802 Available on commercial versions N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These devices are also available in a low profile U-18 LCC surface mount package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various swit.

  2N6798   2N6798







N-CHANNEL ENHANCEMENT MODE TRANSISTOR

2N6798 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . FEATURES 5 .0 8 (0 .2 0 0 ) ty p . • V(BR)DSS = 200V 2 .5 4 (0 .1 0 0 ) 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3 • ID = 5.5A • RDSON = 0.40W 4 5 ° TO–39 METAL PACKAGE Underside View PIN 1 – Source PIN 2 – Gate PIN 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS VGS ID Drain–Source Voltage Gate–Source Voltage Drain Current Continuous TC = 25°C TC = 100°C Drain Current Pulsed IDM IA Avalanche Current PD Total Device Dissipation @ TC = 25°C TC = 100°C TJ , TSTG Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS RqJC Thermal Resistance Junction to Case RqJC Thermal Resistance Junction to Ambient TL Maximum Lead Temperature 1.5mm from Case for 10 secs. 200V ±20V 5.5A 3.5A 22A 3.1A 25W 10W –55 to +150°C 5.0°CW 175°CW 300°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Prelim. 6/99 2N6798 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter V(BR)DSS VGS(th) IGSS ID(on) IDSS rDS(on) gfs Ciss Coss Crss tdon tr td(of) tf VSD IS ISM trr Qrr Drain–Source Breakdown Voltage Gate Thresshold.


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