2N6835

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VCEO(SUS) Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous 850 V 450 V 6V 8A ICM Collector Current-Peak 16 A IB Base Current-Continuous 6A IBM Base Current-Peak 12 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.17 UNIT ℃/W isc Product Specification 2N6835 isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N6835 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 450 V VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEV ICER Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector C...