LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
2N6849
P–CHANNEL POWER MOSFETs VDSS ID(cont) RDS(on)
FEATURES
• Si...
LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
2N6849
P–CHANNEL POWER
MOSFETs VDSS ID(cont) RDS(on)
FEATURES
Single pulse avalanche energy rated SOA is power dissipation limited Nanosecond switching speeds Linear transfer characteristics High input impedance
8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 )
5 .0 8 (0 .2 0 0 ) ty p .
4 .1 9 (0 .1 6 5 ) 4 .9 5 (0 .1 9 5 )
0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 )
0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 )
!
2 .5 4 (0 .1 0 0 )
- 100V - 6.5A 0.30W
1 2 .7 0 (0 .5 0 0 ) m in .
4 5 °
TO–39 METAL PACKAGE
Underside View Pin 2 = Base Pin 3 = Collector
Pin 1 = Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS VDS VDG ID IDM EAS PD TJ , TSTG RqJC RqJA Gate – Source
Voltage* Drain – Source
Voltage* Drain – Gate
Voltage (RGS = 20kW)* Continuous Drain Current @ TC = 25°C* @ TC = 100°C* Pulsed Drain Current2* Single Pulse Avalanche Current3 Power Dissipation @ TC = 25°C* Linear Derating Factor* Operating and Storage Junction Temperature Range* Thermal Resistance Junction to Case* Thermal Resistance Junction to Ambient ±20V -100V -100V –6.5A –4.1A –25A 500mJ 25W 0.2W/°C –55 to +150°C 5°C/W 175°C/W
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Prelim. 9/00
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise sta...