P-Channel Enhancement-Mode Transistor
Product Summary
V(BR)DSS (V) –200
rDS(on) (W) 0.80
ID (A) –4.0
Parametric lim...
P-Channel Enhancement-Mode Transistor
Product Summary
V(BR)DSS (V) –200
rDS(on) (W) 0.80
ID (A) –4.0
Parametric limits in accordance with MIL-S-19500/564 where applicable.
TO-205AF (TO-39)
S
S 1
G
2N6851
2 G
3 D
Top View
D P-Channel
MOSFET
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
Drain-Source
Voltage Gate-Source
Voltage
Parameter
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current Avalanche Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.)
TC = 25_C TC = 100_C
TC = 25_C TC = 100_C
Thermal Resistance Ratings
Symbol VDS VGS
ID
IDM IAR
PD
TJ, Tstg TL
Limit
–200 "20 –4.0 –2.4 –20 –3.1
25 10 –55 to 150 300
Unit V
A
W _C
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient Maximum Junction-to-Case
RthJA RthJC
175 _C/W
5.0
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