Transistor. 2N6851 Datasheet

2N6851 Datasheet PDF


Part 2N6851
Description P-Channel Enhancement-Mode Transistor
Feature P-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) –200 rDS(on) (W) 0.80 ID (A) .
Manufacture TEMIC
Datasheet
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P-Channel Enhancement-Mode Transistor Product Summary V(BR 2N6851 Datasheet
P-CHANNEL POWER MOSFET 2N6851 • Hermetic TO39 Metal Package 2N6851 Datasheet




2N6851
P-Channel Enhancement-Mode Transistor
Product Summary
V(BR)DSS (V)
–200
rDS(on) (W)
0.80
ID (A)
–4.0
Parametric limits in accordance with MIL-S-19500/564 where applicable.
TO-205AF
(TO-39)
S
S
1
G
2N6851
2
G
3
D
Top View
D
P-Channel MOSFET
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current
Avalanche Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
TC = 25_C
TC = 100_C
TC = 25_C
TC = 100_C
Thermal Resistance Ratings
Symbol
VDS
VGS
ID
IDM
IAR
PD
TJ, Tstg
TL
Limit
–200
"20
–4.0
–2.4
–20
–3.1
25
10
–55 to 150
300
Unit
V
A
W
_C
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Case
RthJA
RthJC
175
_C/W
5.0
Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document
#1490.
Siliconix
P-37010—Rev. A, 06-Jun-94
1



2N6851
2N6851
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamic
Symbol
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
Test Condition
VGS = 0 V, ID = –1000 mA
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = –160 V, VGS = 0 V
VDS = –160 V, VGS = 0 V, TJ = 125_C
VDS = –3.3 V, VGS = –10 V
VGS = –10 V, ID = –2.4 A
VGS = –10 V, ID = –2.4 A, TJ = 125_C
VDS = –15 V, ID = –2.4 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = –25 V, f = 1 MHz
VDS = –100 V, VGS = –10 V, ID = –4.0 A
VDD = –100 V, RL = 39 W
ID ^ –2.4 A, VGEN = –10 V, RG = 7.5 W
Source-Drain Diode Ratings and Characteristics
Continuous Current
IS
Pulsed Current
Diode Forward Voltageb
Reverse Recovery Time
Reverse Recovery Charge
ISM
VSD
trr
Qrr
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
IF = –4.0 A, VGS = 0 V
IF = –4.0 A, di/dt = 100 A/ms
Limit
Min Typa Max Unit
–200
–2.0
–4.0
2.2
V
–4.0
"100 nA
–25
–250
mA
A
0.50 0.80
1.0 1.6
W
2. 6.6 S
625
280 pF
105
14.7 24 34.8
0.5 3.4 6.1 nC
3.3 13.5 20.1
9 50
50 100
ns
32 80
38 80
–4.0
A
–20
–0.8 –2.0 V
160 400 ns
1.6 mC
2 Siliconix
P-37010—Rev. A, 06-Jun-94






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