Thyristors. 2N689 Datasheet

2N689 Datasheet PDF

Part 2N689
Description Thyristors
Feature [Rlcn3LJ1] Solid State Division File No. 96 Thyristors 2N6812N690 All-Diffused Types for Power-Con.
Manufacture RCA
Datasheet
Download 2N689 Datasheet

2N689 Datasheet
2N689 Datasheet
2N682, 2N683, and 2N685 – 2N692 Available on commercial ver 2N689 Datasheet
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-111 2N689 Datasheet
2N681-2N692, 2N5204-2N5207 High-reliability discrete produc 2N689 Datasheet
[Rlcn3LJ1] Solid State Division File No. 96 Thyristors 2N68 2N689 Datasheet
2N681 thru 2N689 (SILICON) CME2~ Industrial-type, silicon 2N689 Datasheet
2N6898 Datasheet
INCHANGE Semiconductor isc P-Channel MOSFET Transistor isc 2N6898 Datasheet
2N689A Datasheet




2N689
[Rlcn3LJ1]
Solid State
Division
File No. 96
Thyristors
2N681-
2N690
All-Diffused Types for Power-Control and Power-Switching Applications
Cathode
RCA-2N681 through 2N690 con- •
trolled-rectifiers are all-diffused,
three-junction, silicon devices for use
in power-control and power-switching •
applications requiring blocking-volt-
age capabilities to 600 volts and •
forward-current capability of 16 am-
Symmetrical gate-cathode construction - pravides
uniform current density. rapid electrical con-
ductian, and efficient heat dissipation
Direct-soldered internal construction - assures
exceptional resistance to fatigue
Each unit aged at maximum ratings to assure
dependable performance
peres (average value) or 25 amperes • All-welded construction and hermetic sealing
(rms value).
H-1601
JEDEC T0-48
• Shorted emitter gate-cathode construction
• Low leakage currents, both forward and reverse
FEATURES
• Low forward voltage drop at high current levels
• All-diffused construction - assures exceptional
uniformity and stability of characteristics
• Law thermal resistance
• Multi-diffusian process - permits precise control • Exceptionally high stud-torque capability through
of individual junction parameters
use of high-strength copper-alloy stud
----~--------------~--~
Absolute·Maximum Ratings, for Operation with Sinusoidal AC Supply Voltage
at a Frequency between 50 and 400 Hz and with Resistive or Inductive Load
RATINGS
2N681 2N683
2N682
2N684 2N686
2N685
2N687 2N689
2N688
2N690
UNITS
Transient Peak Reverse Voltage
(Non·Repetitive), vRM (non·rep) .. . . . . . . . . .. 35 75 150
225 300 350
400 500 600
720 V
Peak Reverse Voltage
(Repetitive), VRM (rep). . . . . . . . . . . . . . . . . . .. 25 50 100
150 200250
300 400 500
600 V
Peak Forward Blocking Voltage
(Repetitive), vFBOM (rep) ................ .
600 - - - - - - - - V
Forward Current:
For case temperature (TC) of +650 C,
and a conduction angle of 1800 , IFAV ..... .
16
RMS value, IFRMS ...................... . - - - - - - - - - - - 2 5 - - - - - - - -
For other case temperatures and
conduction angles '" .................. . - - - - - - - - - - - See Fig. 2 - - - - - - - -
A
A
Peak Surge Current, iFM (surge)
For one cycle of applied voltage, TC = 650 C
----------150 ------- A
For more than one cycle of applied Voltage..... - - - - - - - - - - See Fig. 3 - - - - - - - -
Rate of Change of Forward Current:
VD = VDROM, IGT = 200 mA, tr = 0.5/lS
(See Fig. 7), di/dt ..................... . - - - - - - - - - - - 200 - - - - - - - -
Fusing Current (for SCR Protection):
Tj =-65 to 1250 C, t =1 to 8.3 ms, 12 t. ..... . - - - - - - - - - - 5 0 - - - - - - - -
- - - - - - - - - - - 5Peak Gate Power, PGM .................... .
116 g.74



2N689
File No. 96 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N681-2N690
Absolute·Maximum Ratings, for Operation with Sinusoidal AC Supply Voltage at a
Frequency between 50 and 400 Hz and with Resistive or Inductive Load (Cont'd.).
RATINGS
2N681 2N683
2N682
2N684 2N686
2N685
2N687 2N689
2N688
Average Forward Gate Power, PGAV
0.5
Peak Forward Gate Current, iGKM
2
Peak Gate Voltage:
Forward, vGKM
Reverse, vKGM
10
5
Temperature:
Storage, Tstg •••.•.....................•
Operating, Case# , TC ..•..••.•........•...
Free Air, TFA ..•.•.••••....•.•...•..••.•
-65 to +150
-65 to +125
See Fig. 4
Stud Torque:, Ts
Recommended •.••••....•....•.•••..••.•
Maximum (DO NOT EXCEED).•.•..••.•••.•
35
50
2N690
UNITS
W
A
V
V
oC
oC
in·lb
in·lb
Electrical and Thermal Characteristics at Maximum Electrical Ratings
(unless otherwise specified), and at Indicated Case Temperature, TC.
CHARACTERISTICS
2N681 2N683
2N682
2N684 . 2N686
2N685
2N687 2N689
2N688
2N690 UNITS
Minimum Forward Breakover Voltage, VBOO:
AtTC=+1250C •••.•••...•••••.••.•••..• 25 50 100
150200 250
300400 500
600 V
Maximum Average (DC) Forward
Blocking Current, I FBOAV:
AtTC=+1250C ......................... 6.5 6.5 6.5
6.5 6 5.5
54 3
2.5 mA
Maximum Average (DC) Reverse
Blocking Current, I RBOAV:
At TC = +1250C. • • . • . • . . . • • . . • • • . . • • • . .. 6.5 6.5 6.5
6.5 6 5.5
54 3
2.5 mA
Maximum Average Forward
Voltage Drop, VFAV:
At a Forward Current of 25
amperes and a TC = +650C •..•..••..•••..•.
0.86
V
Maximum DC Gate·Trigger Current, IGT:
AtTC=+1250C ...••..•.••.•.•..••..•...
25 mA
DC Gate·Trigger Voltage, VGT:
Maximum at TC = -650 to +1250C .......•..
3
Minimum at TC = +1250C ••............... - - - - - - - - - - - 0.25
V
V
Holding Current, iHOO:
Typical at TC = +1250C ••••.. '.' ..••••.••.•
15 mA
Maximum Thermal Resistance
Junction·to·Case, 0J.C •.••..•••..••..••...
2 oC/W
TYPICAL E·I CHARACTERISTIC OF SILICON
CONTROL L ED·RECTI FI ER
# For temperature measurement reference point,
see Dimensional Outline.
TERMINAL CONNECTIONS
No. I-Gate
No.2-Cathode
Case, No.3-Anode
117




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