RECTIFIER. 2N692 Datasheet

2N692 Datasheet PDF

Part 2N692
Description SILICON CONTROLLED RECTIFIER
Feature 2N681-2N692, 2N5204-2N5207 High-reliability discrete products and engineering services since 1977 .
Manufacture Digitron Semiconductors
Datasheet
Download 2N692 Datasheet

2N692 Datasheet
2N692 Datasheet
2N682, 2N683, and 2N685 – 2N692 Available on commercial ver 2N692 Datasheet
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-111 2N692 Datasheet
2N681-2N692, 2N5204-2N5207 High-reliability discrete produc 2N692 Datasheet
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2N692
2N681-2N692,
2N5204-2N5207
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
RMS on-state current
Average on-state current
@ TC
Peak one cycle surge @ 50 Hz
Peak one cycle surge @ 60 Hz
Fusing @ 50 Hz
Fusing @ 60 Hz
Gate current to trigger
Typical critical dv/dt exponential to VDRM
Critical rate of rise
Typical junction temperature
Symbol
IT(RMS)
IT(AV)
TC
ITSM
I2t
IGT
dv/dt
di/dt
TJ
2N681-2N692
25
16
-65 to +65
145
150
103
94
40
-
75-100
-65 to 125
2N5204-2N5207
35
22
-40 to +40
285
300
410
375
40
100
100
-40 to 125
Unit
A
A
°C
A
A
A2s
mA
V/µs
A/µs
°C
VOLTAGE RATINGS (Applied gate voltage zero or negative)
VRRM, VDRM
Maximum repetitive peak reverse and
Part Number
off-state voltage
(V)
2N681
TJ = -65 to +125°C
25
2N682
50
2N683
100
2N685
200
2N687
300
2N688
400
2N689
500
2N690
600
2N691
700
2N692
800
TJ = -40 to 125°C
2N5204
600
2N5205
800
2N5206
1000
2N5207
1200
VRSM
Maximum non-repetitive peak reverse voltage
tp ≤ 5 ms
(V)
TJ = -65 to +125°C
35
75
150
300
400
500
600
720
840
960
TJ = -40 to 125°C
720
960
1200
1440
Rev. 20150526



2N692
2N681-2N692,
2N5204-2N5207
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Symbol
Characteristics
2N681-2N692 2N5204-2N5207
IT(RMS)
Maximum RMS on-state current
25
35
IT(AV)
Maximum average on-state
current
16
22
@ TC =
-65 to +65
-40 to +40
145 285
150 300
ITSM Maximum peak one cycle,
non-repetitive surge current
170 340
180
103
I2t Maximum I2t capability, for fusing 94
I2t
Maximum I2t capability for
individual device fusing
145
135
I2√t
Maximum I2√t capability for
individual device fusing (1)
1450
355
410
375
580
530
5800
VTM Maximum peak on-state voltage
2
IH Maximum holding current
BLOCKING
dv/dt
Minimum critical rate of rise of off-
state voltage
20 @ 25°C
100 typical
250 typical
2.3
200 @-40°C
100
250
Units
A
A
°C
A
A2s
A2s
A2√s
V
mA
Conditions
180° half sine wave conduction
50 Hz half cycle sine
wave or 6 ms
rectangular pulse
60 Hz half cycle sine
wave or 5 ms
rectangular pulse
50 Hz half cycle sine
wave or 6 ms
rectangular pulse
60 Hz half cycle sine
wave or 5 ms
rectangular pulse
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10ms initial
TJ ≤ 125°C,
VRRM following surge =
0
TJ = 25°C, IT(AV) =
16A(50A peak) –
2N681
IT(AV) = 22A (70A) peak
– 2N5204
Anode supply = 24V,
initial IT= 1.0A
Following any
rated load
condition and with
rated VRRM applied
following surge
Same conditions
as above except
with VRRM applied
following
surge = 0
Rated VRRM applied
following surge,
initial
TJ = 125°C
VRRM = 0 following
surge, initial
TJ = 125°C
V/µs
TJ = 125°C
exponential to 100%
rated VDRM
TJ = 125°C
exponential to 67%
rated VDRM
Rev. 20150526




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