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2N697 Datasheet

Part Number 2N697
Manufacturers Motorola
Logo Motorola
Description NPN Transistor
Datasheet 2N697 Datasheet2N697 Datasheet (PDF)

2N696 (SILICON) 2N697 CASE 31 (TO-5) NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications. MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCB 60 Vdc Emitter-Base Voltage VEB 5.0 Vdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD Total Device Dissipation @ TC = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range TJ' Tstg 0.6 13.3.

  2N697   2N697






Part Number 2N697
Manufacturers TT
Logo TT
Description GENERAL PURPOSE SILICON NPN TRANSISTOR
Datasheet 2N697 Datasheet2N697 Datasheet (PDF)

GENERAL PURPOSE SILICON NPN TRANSISTOR 2N697 • Hermetic TO39 (TO-205AD) Metal Package. • Ideally suited for General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 60V VCER Collector – Emitter Voltage 40V VEBO Emitter – Base Voltage 5.0V PD Total Power Dissipation at TA = 25°C 600mW Derate Above 25°C 4.0mW/°C PD Total Power Dissipation at TC = 25°C 2.0W Derate Above 25°C 13.3mW/°C TJ .

  2N697   2N697







Part Number 2N697
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description (2N696 / 2N697) NPN Transistor
Datasheet 2N697 Datasheet2N697 Datasheet (PDF)

www.DataSheet.co.kr TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices 2N696 2N696S 2N697 2N697S Qualified Level JAN MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range Symbol VCBO VEBO PT TJ, Tstg Symbol RθJC Value 60 5.0 0.6 2.0 -65 to +200 Max. 0.075 Units Vdc Vdc W W 0 C Unit C/mW THERMAL CHARACTERISTICS Characteristics .

  2N697   2N697







Part Number 2N697
Manufacturers Motorola
Logo Motorola
Description GENERAL PURPOSE TRANSISTOR
Datasheet 2N697 Datasheet2N697 Datasheet (PDF)

2N697 CASE 79, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTOR NPN SILICON Refer to 2N2218 for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage =Total Device Dissipation (a TA 25°C Derate above 25°C Total Device Dissipation (a Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCER v CBO Vebo PD Pd TJ< Tstg Value 40 60 5.0 0.6 4.0 2.0 13.3 - 65 to + 200 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherw.

  2N697   2N697







Part Number 2N697
Manufacturers CDIL
Logo CDIL
Description NPN SILICON EPITAXIAL TRANSISTOR
Datasheet 2N697 Datasheet2N697 Datasheet (PDF)

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N 697 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Voltage VCER Collector Base Voltage VCBO Emitter Base Voltage VEBO Power Dissipation @ Ta=25ºC PD Derate Above 25ºC Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range ELEC.

  2N697   2N697







Part Number 2N697
Manufacturers Semelab
Logo Semelab
Description Bipolar NPN Device
Datasheet 2N697 Datasheet2N697 Datasheet (PDF)

www.DataSheet.co.kr 2N697 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 60V 5.08 (0.200) typ. IC = 0.2A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of .

  2N697   2N697







NPN Transistor

2N696 (SILICON) 2N697 CASE 31 (TO-5) NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications. MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCB 60 Vdc Emitter-Base Voltage VEB 5.0 Vdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD Total Device Dissipation @ TC = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range TJ' Tstg 0.6 13.3 2.0 13.3 -65 to +200 watt mWrC Watts mWrC °c ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage" (Ic = 100 mAdc, RBE = 10 ohms) Symbol Min Max Unit BVCER" 40 Vdc Collector-Base Breakdown Voltage (IC = 100 j.tAdc, IE = 0) BVCBO 60 Vdc Emitter-Base Breakdown Voltage (~ = 100 !.LAdc, IC = 0) BVEBO 5.0 Vdc Collector Cutoff Current (VCB = 30 Vdc, ~ = 0) (VCB= 30 Vdc, IE = 0, TA = 1500 C) ICBO -.


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