IGBTs. 2N6977 Datasheet

2N6977 Datasheet PDF


Part 2N6977
Description N-Channel IGBTs
Feature Semiconductor 2N6975, 2N6976, 2N6977, 2N6978 5A, 400V and 500V N-Channel IGBTs Package JEDEC TO-204.
Manufacture Intersil Corporation
Datasheet
Download 2N6977 Datasheet


Semiconductor 2N6975, 2N6976, 2N6977, 2N6978 5A, 400V and 5 2N6977 Datasheet




2N6977
Semiconductor
2N6975, 2N6976,
2N6977, 2N6978
April 1995
5A, 400V and 500V N-Channel IGBTs
Features
Package
• 5A, 400V and 500V
• VCE(ON) 2V
• TFI 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
JEDEC TO-204AA
BOTTOM VIEW
EMITTER
COLLECTOR
(FLANGE)
GATE
• High Input Impedance
Applications
• Power Supplies
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
• Motor Drives
• Protection Circuits
G
Description
The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel
enhancement-mode insulated gate bipolar transistors (IGBTs)
designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
E
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
2N6975
TO-204AA
2N6976
TO-204AA
2N6977
TO-204AA
2N6978
TO-204AA
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified.
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES
Collector-Gate Voltage (RGE = 1M) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VCGR
Reverse Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VCES(REV.)
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . TJ, TSTG
NOTE:
2N6975/2N6977
(Note 1)
400
400
5
±20
5
10
100
0.8
-55 to +150
1. JEDEC registered value.
2N6976/2N6978
(Note 1)
500
500
5
±20
5
10
100
0.8
-55 to +150
UNITS
V
V
V
V
A
A
W
W/oC
oC
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright © Harris Corporation 1995
3-1
File Number 2297.2



2N6977
Specifications 2N6975, 2N6976, 2N6977, 2N6978
Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
2N6975/2N6977
2N6976/2N6978
PARAMETERS
SYMBOL TEST CONDITIONS
MIN
MAX
MIN
MAX
Collector-Emitter
Breakdown Voltage
BVCES
lC = 1 mA, VGE = 0
400
-
500
-
(Note 1)
(Note 1)
Gate Threshold Voltage
VGE(TH) VGE = VCE, IC = 1mA
2
(Note 1)
4.5
(Note 1)
2
(Note 1)
4.5
(Note 1)
Zero Gate Voltage Collector
Current
lCES
VCE = 400V
- 250 -
(Note 1)
-
VCE = 500V
TC = +125oC
VCE = 400V
- - - 250
(Note 1)
----
-
1000
-
(Note 1)
-
VCE = 500V
- - - 1000
(Note 1)
Gate-Emitter Leakage Current
IGES
VGE = ±20V, VCE = 0V
-
100
-
100
(Note 1)
(Note 1)
Reverse Collector-Emitter
Leakage Current
IECS
RGE = 0, VEC = 5V
-5-5
(Note 1)
(Note 1)
Collector-Emitter On Voltage
VCE(ON) IC = 5A, VGE = 10V
-2-2
(Note 1)
(Note 1)
Gate-Emitter Plateau Voltage
VGEP
IC = 10A, VGE = 20V
IC = 5A, VCE = 10V
-
3.4
(Note 1)
2.5
6.8
(Note 1)
-
3.4
(Note 1)
2.5
6.8
(Note 1)
On-State Gate Charge
QG(ON) IC = 5A, VCE = 10V
12
(Note 1)
25
(Note 1)
12
(Note 1)
25
(Note 1)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
tD(ON)
tR
tD(ON)
tFI
IC = 5A
VCE(CLP) = 300V
L = 50µH
TJ = +125oC
VGE = 10V
RG = 50
2N6975
2N6976
50 Max
50 Max
400 Max
(Note 1)
1000 Max
(Note 1)
2N6977
2N6978
500 Max
(Note 1)
Turn-Off
Energy Loss per Cycle
(Off Switching Dissipation=
WOFF x Frequency)
Thermal Resistance
Junction-to-Case
WOFF
RθJC
IC = 5A
VCE(CLP) = 300V
L = 50µH
TJ = +125oC
VGE = 10V
RG = 50
2N6975
2N6976
2N6977
2N6978
1000 Max
(Note 1)
500 Max
(Note 1)
1.25
(Note 1)
NOTE:
1. JEDEC registered value.
UNITS
V
V
µA
µA
µA
µA
µA
ns
mA
V
V
V
nC
ns
ns
ns
ns
ns
µJ
µJ
oC/W
3-2






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