Data Sheet No. 2N6987
Type 2N6987
Geometry 0600 Polarity PNP Qual Level: JAN - JANS
Features: • • • • • • An array of f...
Data Sheet No. 2N6987
Type 2N6987
Geometry 0600 Polarity PNP Qual Level: JAN - JANS
Features: An array of four independent PNP silicon switching transistors. Housed in a cerdip case. Also available in chip form using the 0600 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/558 which Semicoa meets in all cases. The Typ values are actual batch averages for Semicoa. Radiation Graphs available.
Generic Part Number: 2N6987
REF: MIL-PRF-19500/558
Cerdip
Maximum Ratings
TC = 25 C unless otherwise specified
o
Rating
Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature
Symbol
VCEO VCBO VEBO IC TJ TSTG
Rating
60 60 5.0 600 -65 to +200 -65 to +200
Unit
V V V mA
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C C
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Data Sheet No. 2N6987
Electrical Characteristics
TC = 25oC unless otherwise specified
OFF Characteristics
Collector-Base Breakdown
Voltage IC = 10 µA Collector-Emitter Breakdown
Voltage IC = 10 mA Emitter-Base Breakdown
Voltage IE = 10 µA, pulsed Collector-Base Cutoff Current VCB = 50 V Emitter-Base Cutoff Current VEB = 3.5 V
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO1 IEBO
Min
60 60 5.0 -----
Typ
100 70 9.0 0.25 0.1
Max
------10 50
Unit
V V V nA nA
ON Characteristics
DC Current Gain IC = 100 µA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V (pulse test) IC = 500 mA, VCE = 10 V (pulse test) Collector-Emitter Saturation
Voltage IC = 150 mA, IB = ...