SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES High density cell design for low RDS(ON). Vol...
SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES High density cell design for low RDS(ON).
Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source
Voltage
Gate-Source
Voltage
Drain Current
Continuous Pulsed(Note 1)
Drain Power Dissipation
Junction Temperature
VDSS VGSS
ID IDP PD Tj
Storage Temperature Range
Tstg
Note 1) Pulse Width 10 , Duty Cycle 1%
RATING 60 20 500 2000 625 150
-55 150
UNIT V V
mA
mW
L M
C
2N7000
N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BC
JA
KE G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00+_ 0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. SOURCE 2. GATE 3. DRAIN
TO-92
EQUIVALENT CIRCUIT
D
G
S
PLEASE HANDLE WITH CAUTION. THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Breakdow...
