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2N7000 MOSFET Datasheet PDF

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part Number 2N7000
Description N-Channel MOSFET
Feature SEMICONDUCTOR TECHNICAL DATA INTERFACE A ND SWITCHING APPLICATION.
FEATURES High density cell design for low RDS(ON).
V oltage controlled small signal switch.
Rugged and reliable.
High saturation cu rrent capablity.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Sourc e Voltage Gate-Source Voltage Drain C urrent Continuous Pulsed(Note 1) Drai n Power Dissipation Junction Temperatu re VDSS VGSS ID IDP PD Tj Storage Tem perature Range Tstg Note 1) Pulse Wid th 10 , Duty Cycle 1% RATING 60 20 500 2000 625 150 -55 150 UNIT V V mA mW L M C 2N7000 N CHANNEL ENHANCEMENT MOD E FIELD EFFECT .
Manufacture KEC
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2N7000

 

 

 


 

 

 

Part Number 2N7000
Description N-Channel MOSFET
Feature Isc N-Channel MOSFET Transistor INCHANG E Semiconductor 2N7000 ·FEATURES ·Wi th TO-92 package ·Low input capacitanc e and gate charge ·Low gate input resi stance ·100% avalanche tested ·Minimu m Lot-to-Lot variations for robust devi ce performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·AB SOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 2 00 IDM Drain Current-Single Pulsed 1 .
3 PD Total Dissipation @TC=25℃ 35 0 Tj Max.
Operating Junction .
Manufacture INCHANGE
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Part Number 2N7000
Description N-Channel Enhancement Mode Power MosFET
Feature Elektronische Bauelemente 2N7000 0.
2A , 60V , RDS(ON) 5 N-Channel Enhanceme nt Mode Power MOSFET RoHS Compliant Pr oduct A suffix of “-C” specifies ha logen & lead-free FEATURES  High den sity cell design for low RDS(ON)  Vo ltage controlled small signal switch Rugged and reliable  High saturati on current capability APPLICATIONS  Load switch for portable devices  D C/DC converter MARKING 2N 7000 021 D  G ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current ID Po wer Dissipation PD Thermal Resistance .
Manufacture SeCoS
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