2N7002BKV

2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ Logic-level compatible „ Very fast switching „ Trench MOSFET technology „ ESD protection up to 2 kV „ AEC-Q101 qualified 1.3 Applications „ Relay driver „ High-speed line driver „ Low-side loadswitch „ Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = 10 V Tj = 25 °C; VGS = 10 V; ID = 500 mA - - 60 V - - ±20 V [1] - - 340 mA - 1 1.6 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. Nexperia 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning Symbol S1 G1 D2 S2 G2 D1 Description source 1 gate 1 drain 2 source 2 gate 2 drain 1 Simplified outline Graphic symbol 654 1 6 123 2 5 34 017aaa055 3. Ordering information Table 3. Ordering information Type number Package Name Description 2N7002BKV - plastic surface-mounted package; 6 leads 4. Marking Table 4. Marking codes Type number 2N7002BKV Markin...