2N7002E

N-Channel 60V MOSFET Features: Surface-mounted package Halogen free Advanced trench cell design Extremely low threshold voltage ESD protected (HBM ≧ 2KV) Application Portable appliances 2N7002E BVDSS=60V , RDS(ON)≦3Ω@VGS=10V RDS(ON)≦4Ω@VGS=4.5V ID=0.43A Absolute Maximum Ratings (TA=25℃Unless Otherwise Noted) Parameter Symbol Marking 2N7002E E72 Drain-Source Voltage VDSS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current ID(1) 0.43 Pulsed Drain Current(1) Power Dissipation Ta=25℃ Ta=100℃ Operating Junction and Storage Temperature Range IDM(2) PD TJ, Tstg 1.7 0.83 0.33 -55 to150 Diode Forward Current IS(1) 0.4 Thermal Characteristics Symbol Symbol Typ. Thermal Resistance JCunhcatrioanc-tteor-iCstaisce RθJC 189 Notes： (1) Surface Mounted on 1 in 2 pad area, t≦10sec (2) Pulse width ≦300us, duty cycle ≦2％ (3) Unit mounted on glass-epoxy substrate with 1oz/ft2_1 x 1 mm copper pad per pin. Unit V V A A W ℃ A Unit ℃/W Rev.02,...