2N7002KA

SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed (Note 1) Drain Power Dissipation (Note 2) Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-toAmbient (Note 2) VDSS VGSS ID IDP PD Tj Tstg 60 20 300 1200 350 150 -55 150 Rth(j-a) 357 Note 1) Pulse Width 10 , Duty Cycle 1% Note 2) Package mounted on 99% Alumina 10 8 0.6mm EQUIVALENT CIRCUIT D UNIT V V mA mW /W G 2N7002KA N Channel MOSFET ESD Protected 2000V E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 Q K 0.00 ~ 0.10 PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. SOURCE 2. GATE 3. DRAIN SOT-23 Marking Type Name 2P Lot No. S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse BVDSS IDSS IGSSF IGSSR VGS=0V, ID=10 A VDS=60V, VGS=0V VGS=20V, VDS=0V VGS=-20V, VDS=0V ESD-Capability* C=100pF, R=1.5K - Both forward and reverse direction 3 pulse *Failure criterion : IDSS > 1...