2N7002KW
N-Channel Enhancement Mode Field Effect Transistor
Features
Low On−Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra−Small Surface Mount Package These Devices are Pb−Free and are RoHS Compliant ESD HBM = 1000 V as per JESD22 A114 and ESD CDM = 1500 V
as per JESD22 C101
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