2N7002LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7002LT1/D TMOS FET Transistor N–Channel Enhancement 3 DRAIN 1 GATE 2N7002LT1 Motorola Preferred Device 3 2 SOURCE MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Drain Current — Continuous TC = 25°C(1) Drain Current — Continuous TC = 100°C(1) Drain Current — Pulsed(2) Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Symbol VDSS VDGR ID ID IDM VGS VGSM Value 60 60 ± 115 ± 75 ± 800 ± 20 ± 40 Unit Vdc Vdc mAdc 1 2 CASE 318 – 08, STYLE 21 SOT– 23 (TO – 236AB) Vdc Vpk THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board,(3) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(4) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RθJA PD Max 225 1.8 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING 2N7002LT1 = 702 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) Gate–Body Leakage Current, Forward (VGS = 20 Vdc) Gate–Body Leakage Current, Reverse (VGS = – 20 Vdc) 1. 2. 3. 4. TJ = 25°C TJ = 125°C V(BR)DSS IDSS IGSSF IGSSR 60 — — — — — — — — — — 1.0 500 100 –100 Vdc µAdc nAdc nAdc The Power Dissipation o...