2N7002LT1G

WWW.DCY-CHINA.NET Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 ●FEATURES 1)We declare that the material of product compliant with RoHS requirements and Halogen Free. 2)ESD Protected:1000V 3)S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ●DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 2N7002LT1G 702 3000/Tape&Reel 2N7002LT1G Simplified Schematic ●MAXIMUM RATINGS(Ta = 25°C) Rating Symbol Drain–Source Voltage VDSS Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR Value 60 60 Drain Current – Continuous TC = 25°C (Note 1.) TC = 100°C (Note 1.) – Pulsed (Note 2.) Gate–Source Voltage – Continuous – Non–repetitive (tp≤ 50μs) ID ID IDM VGS VGSM ±115 ±75 ±800 ±20 ±40 Unit Vdc Vdc mAdc Vdc Vpk Gate 1 3 Drain Source 2 (Top View) ●THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 (Note 3.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Symbo Max l 225 PD 1.8 RθJA 556 PD RθJA 300 2.4 417 Unit mW mW/°C mW mW/°C Junction and Storage Temperature TJ, Tstg -55 to +150 1. The Power Dissipation of the package may result in a lower continuous 2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%. 3. FR–5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. May,2015 Rev...