2N7002NXAK

2N7002NXAK 60 V, single N-channel Trench MOSFET 1 July 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology ESD protected 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 10 V; Tsp = 25 °C - - 300 mA VGS = 10 V; Tamb = 25 °C [1] - - 190 mA Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C resistance - 3 4.5 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. Nexperia 5. Pinning information Table 2. Pinning information Pin Symbol Description 1G gate 2S source 3D drain 2N7002NXAK 60 V, single N-channel Trench MOSFET Simplified outline 3 Graphic symbol D 12 TO-236AB (SOT23) G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name 2N7002NXAK TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 7. Marking Table 4. Marking codes Type number 2N7002NXAK [1] % = placeholder for manufacturing site code Marking code[1] ...