2N7002V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate MOSFETS 2N7002V MOSFET (N-Channel) V(BR)DSS 60 V RDS(on)MAX   5Ω@10V  7Ω@5V   ID 115mA  SOT-563 6 5 4 1 2 3 FEATURE ∙ Dual N-channel MOSFET ∙ Low on-resistance ∙ Low gate threshold voltage ∙ Low input capacitance ∙ Fast switching speed ∙ Low input/output leakage MARKING APPLICATION z Load Switch for Portable Devices z DC/DC Converter Equivalent Circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VDS VGS ID PD TJ Tstg Parameter Drain-Source voltage Gate-Source voltage Drain Current Power Dissipation Junction Temperature Storage Temperature Value 60 ±20 115 150 150 -55-150 Unit V V mA mW ℃ ℃ www.cj-elec.com 1 G,Sep,2016 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Pa rameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current On-state Drain Current Symbol V(BR)DSS Vth(GS) lGS...