RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level IRHNA67164 100 kRads(...
RADIATION HARDENED POWER
MOSFET SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level IRHNA67164 100 kRads(Si) IRHNA63164 300 kRads(Si)
RDS(on) 0.018 0.018
ID 56A* 56A*
PD-96959C
IRHNA67164 2N7581U2
150V, N-CHANNEL
R6 TECHNOLOGY
SMD-2
Description
IR HiRel R6 S-line technology provides high performance power
MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer LET up to 90 (MeV/(mg/cm2).Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of
MOSFETs such as
voltage control and temperature stability of electrical parameters.
Features
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge ...
