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2N828A

PNP germanium epitaxial mesa transistors

Description

2N828 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic DYNAMIC.CHAI!ACTERISTICS Symbol Current-Gain ....,. Bandwldth Product (IC = 10 mAde, VCE = 1 Vile, f = 100 MHz) Output CapaCitance (VCB = 10 Vde, ~ = 0) Small Signal Current Gain (IC = 10 mAde, VCE = 1 Vde, f = 100 MHz) Delay Plus Rise Time (Figure 1) Storage Time (Figure 1) Fall Time...

Motorola

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2N828 PNP germanium epitaxial mesa transistor - Motorola

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