8342N (SILICON) 2N835
NPN silicon epitaxial transistors for high- speed switching applications.
CASE 22 \
(TO·18) Collec...
8342N (SILICON) 2N835
NPN silicon epitaxial transistors for high- speed switching applications.
CASE 22 \
(TO·18) Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Emitter
Voltage
Collector-Base
Voltage Emitter-Base
Voltage
Collector Current-Continuous Peak
Total Device DisSipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 100°C
Derate above 100°C Operating and Storage Junction
Temperature Range
Symbol VCES VCB VEB
Ie
PD
PD
PD
TJ,Tstg
2N834 2N835
30 40 5.0
200 0.3 2.0
20 25 3.0
1.0 6.67
0.5 6.67
-65 to +175
Unit
Vdc Vdc Vdc mAdc Watt mwflC Watt mW/oC
Watt mWflC
°c
FIGURE 1 - TURN·ON AND TURN·OFF TIME MEASUREMENT CIRCUIT
FIGURE 2 - CHARGE STORAGE TIME CONSTANT MEASUREMENT CIRCUIT
.'Oo
50
+10Vde
'50
82. ,< 0.11&'
...... '_._,.........I\IIr..e--;-'VV~1-O
. ' - - - r = : tt.n ,Y.. =+18Vdc V,.=-19Vdr:
·+l1Y
NOTE. ALL SWlreHINa TIMES MWUR£l) WITH LI/IIATfION MOOU 420 SWlreHINC TIME...