2N835

8342N (SILICON) 2N835 NPN silicon epitaxial transistors for high- speed switching applications. CASE 22 \ (TO·18) Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Peak Total Device DisSipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ TC = 100°C Derate above 100°C Operating and Storage Junction Temperature Range Symbol VCES VCB VEB Ie PD PD PD TJ,Tstg 2N834 2N835 30 40 5.0 200 0.3 2.0 20 25 3.0 1.0 6.67 0.5 6.67 -65 to +175 Unit Vdc Vdc Vdc mAdc Watt mwflC Watt mW/oC Watt mWflC °c FIGURE 1 - TURN·ON AND TURN·OFF TIME MEASUREMENT CIRCUIT FIGURE 2 - CHARGE STORAGE TIME CONSTANT MEASUREMENT CIRCUIT .'Oo 50 +10Vde '50 82. ,< 0.11&' ...... '_._,.........I\IIr..e--;-'VV~1-O . ' - - - r = : tt.n ,Y.. =+18Vdc V,.=-19Vdr: ·+l1Y NOTE. ALL SWlreHINa TIMES MWUR£l) WITH LI/IIATfION MOOU 420 SWlreHINC TIME...