2N869

2N869 (SILICON) 2N995 CASE 22 (TO· IS) Collector connected to case PNP silicon annular transistors for high-frequency general-purpose amplifier applications. MAXIMUM RATINGS Rating Base Voltage Collector- Emitter Voltage Emitter-Base Voltage Total Device Dissipation at 25°C Case Temperature at 100°C Case Temperature Derate above 25°C Total Device DisSipation at 25°C Ambient Temperature Derate above 25°C Storage Temperature Junction Temperature Symbol VCB VCEO VEB Po Po Tstg TJ Types 2N869 2N995 2N869 2N995 2N869 2N995 Both Types Both Types Both Types Both Types Value 25 20 18 15 5.0 4.0 Unit Vdc Vdc Vdc 1.2 Watts 0.68 Watt 6.86 mW/oC 0.36 2.06 -65 to +200 Watt mW/oC °c +200 °c 2-111 2N869, 2N995 (continued) ELECTRICAL CHARACTERISTICS =ITA 25°C unless otherwise noted) Characteristic Collector-Base Breakdown Voltage (Ic = 10 /lAdc, IE = 0) 2N869 2N995 Symbol BVCBO Min Typ Max Unit Vdc 25 20 ------ ------ Collector-Emitter SUstaining Voltage III (Ic = 10 mA...