2N929, A (SILICON) 2N930, A
2N929JAN AVAILABLE
2N930JAN AVAILABLE
NPN silicon annular transistors for low-level, lownoi...
2N929, A (SILICON) 2N930, A
2N929JAN AVAILABLE
2N930JAN AVAILABLE
NPN silicon annular transistors for low-level, lownoise amplifier applications.
CASE 22
(TO·18) Collector connected to C8se
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter
Voltage
Collector-Base
Voltage
Emitter-Base
Voltage
Collector Current
Total Device Dissipation @ TA = 25°C Derate above 25°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
Operating Junction Temperature Range
Storage Temperature Range
VCEO VCB VEB IC PD
PD
TJ Tstg
2N929 2N929A 2N930 2N930A
45 60
45 60
5.0 6.0
30
0.5 3.33
1.8 12 -65to + 175 -65 to +200
Unit
Vdc Vdc Vdc mAdc
W mW/oC Watt mW/oC
°c °c
2-124
2N929, A, 2N930, A (continued)
=ELECTRICAL CHARACTERISTICS (TA 2S'C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown
Voltage 111 (IC = 10 mAde, IB = 0)
BVCEO
Collector-Base Breakdown
Voltage (IC = 10 pAdc, IE = 0)
2N929A, 2N930A
BVCBO
Emitter-Base Breakdown
Voltage (IE = 10 ...
