2N962

2N956 For Specifications, See 2N718A Data. 2N960 (GERMANIUM) 2N961 2N962 2N962JAN AVAILABLE 2N964 2N964JAN AVAILA.BLE 2N965 2N966 PNP germanium epitaxial mesa transistors for highspeed switching applications. CASE 22 (TO·18) Collector connected to case MAXIMUM RATINGS Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and storage Junction Temperature Range NORMALIZED DC CURRENT TRANSFER RATIO Yersus COLLECTOR CURRENT ~ 2.0 ffi 1.5 ~ 1.2 - -~ 1.0 5 0.8 III +85"C ¥ +25°C ~ 0.6 ,.- u ,.- TA = -55°C /" ~ 0.4 ~V ~ 0.3 '"'"~ 0.2 '".J·D.IS ./ 1 5 VeE = 1 Vdc 10 20 50 Ie. COLLECTOR CURRENT (mAde) Symbol VCE VCB VEB PD PD TJ.Tstg 2N960 2N961 2N962 2N964 2N96S 2N966 15 12 12 15 12 12 2.5 2.0 1. 25 150 2.0 300 4.0 -65 to + 100 Unit Vdc Vdc Vdc mW mW/oC mW mW/oC °c CURRENT GAIN·BANDWIDTH PRODUCT (fT) versus...