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2N968 Datasheet

Part Number 2N968
Manufacturers Motorola
Logo Motorola
Description PNP germanium mesa transistors
Datasheet 2N968 Datasheet2N968 Datasheet (PDF)

2N965 (GERMANIUM) 2N966 For Specifications, See 2N960 Data. 2N967 (GERMANIUM) For Specifications, See 2N963 Data. 2N968 thru 2N975 (GERMANIUM) CASE 22 (TO·1S) \ Collector connected to case PNP germanium mesa transistors for high-speed switching applications. MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol 2N968 2N969 2N970 2N971 2N972 2N973 2N974 2N975 VCES 15 12 12 7.0 Unit Vdc Collector-Base Voltage VCB 15 12 12 7.0 Vdc Emitter-Base Voltage VEB 2.5 2.0 1. 25 1. 25 V.

  2N968   2N968






Part Number 2N969
Manufacturers Motorola
Logo Motorola
Description PNP germanium mesa transistors
Datasheet 2N968 Datasheet2N969 Datasheet (PDF)

2N965 (GERMANIUM) 2N966 For Specifications, See 2N960 Data. 2N967 (GERMANIUM) For Specifications, See 2N963 Data. 2N968 thru 2N975 (GERMANIUM) CASE 22 (TO·1S) Collector connected to case PNP germanium mesa transistors for high-speed switching applications. MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol 2N968 2N969 2N970 2N971 2N972 2N973 2N974 2N975 VCES 15 12 12 7.0 Unit Vdc Collector-Base Voltage VCB 15 12 12 7.0 Vdc Emitter-Base Voltage VEB 2.5 2.0 1. 25 1. 25 Vd.

  2N968   2N968







Part Number 2N967
Manufacturers Motorola
Logo Motorola
Description PNP germanium epitaxial mesa transistors
Datasheet 2N968 Datasheet2N967 Datasheet (PDF)

2N960 SERIES (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic Output Capacitance (VCS = 10 Vde, ~ = 0, f = 1 MHz) Symbol Min Typ Max Unit Cob pF - 2.2 4.0 Emitter Transition Capacitance (VES = 1 Vde) Turn-On Time All Types (IC = 10 mAde, lSI =5 mAde, VSE(off) = 1. 25 Vde) (IC = 100 mAde, lSI = 5 mAde, VSE(off) = 1.25 Vde) Turn-Off Time (IC = 10 mAde, lSI = 1 mAde, Ia2 = 0.25 mAde) 2N960,2N961,2N964,2N965 2N962,2N966 (IC = 100 mAde, IBI = 5 mAde, IB2 = 1.25 mAde) 2N960,.

  2N968   2N968







Part Number 2N966
Manufacturers Motorola
Logo Motorola
Description PNP germanium epitaxial mesa transistors
Datasheet 2N968 Datasheet2N966 Datasheet (PDF)

2N956 For Specifications, See 2N718A Data. 2N960 (GERMANIUM) 2N961 2N962 2N962JAN AVAILABLE 2N964 2N964JAN AVAILA.BLE 2N965 2N966 PNP germanium epitaxial mesa transistors for highspeed switching applications. CASE 22 (TO·18) Collector connected to case MAXIMUM RATINGS Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and storage Juncti.

  2N968   2N968







Part Number 2N965
Manufacturers Motorola
Logo Motorola
Description PNP germanium epitaxial mesa transistors
Datasheet 2N968 Datasheet2N965 Datasheet (PDF)

2N956 For Specifications, See 2N718A Data. 2N960 (GERMANIUM) 2N961 2N962 2N962JAN AVAILABLE 2N964 2N964JAN AVAILA.BLE 2N965 2N966 PNP germanium epitaxial mesa transistors for highspeed switching applications. CASE 22 (TO·18) Collector connected to case MAXIMUM RATINGS Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and storage Juncti.

  2N968   2N968







PNP germanium mesa transistors

2N965 (GERMANIUM) 2N966 For Specifications, See 2N960 Data. 2N967 (GERMANIUM) For Specifications, See 2N963 Data. 2N968 thru 2N975 (GERMANIUM) CASE 22 (TO·1S) \ Collector connected to case PNP germanium mesa transistors for high-speed switching applications. MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol 2N968 2N969 2N970 2N971 2N972 2N973 2N974 2N975 VCES 15 12 12 7.0 Unit Vdc Collector-Base Voltage VCB 15 12 12 7.0 Vdc Emitter-Base Voltage VEB 2.5 2.0 1. 25 1. 25 Vdc Total Device Dissipation @ TA =25°C Derate above 25°C PD Total Device Dissipation @ TC =25°C Derate above 25°C PD Operating and storage Junction Temperature Range TJ,Tstg 150 2.0 300 4.0 -65 to +100 mW mW/oC mW mw;oC °c 2-137 2N968 thru 2N975 (continued) NORMALIZED D.C. CURRENT GAIN versus COLLECTOR CURRENT 10 8 6 r-- VeE = 1 Vdc 2.0 +?~ 1.0 0.8 --0.6 ./ ./ - ~0.4 !.---- +25°C_ l.----" _ 550 C ./ 0.2 ) .--V O. 1 0.1 0.2 0.5 1.0 ' 2.0 10 Ie. COLLECTOR CURRE.


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