2N985 (GERMANIUM)
CAU22
(TO-lS) Collector connected to case
PNP germanium epitaxial mesa transistor for highspeed switching applications.
MAXIMUM RATINGS
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
storage Temperature
Device Dissipation
@ TC =25°C
Derate above 25°C
Device Dissipation
@ TA =25°C
Derate above 25°C
Symbol
VCB VCEO VEB
Ie
TJ Tstg
PD
PD
Value
15 7.0 3.0 200 100 -65 to +100
300 4.0
150
2.0
Unit
Vdc Vdc Vdc m.
PNP germanium epitaxial mesa transistor
2N985 (GERMANIUM)
CAU22
(TO-lS) Collector connected to case
PNP germanium epitaxial mesa transistor for highspeed switching applications.
MAXIMUM RATINGS
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
storage Temperature
Device Dissipation
@ TC =25°C
Derate above 25°C
Device Dissipation
@ TA =25°C
Derate above 25°C
Symbol
VCB VCEO VEB
Ie
TJ Tstg
PD
PD
Value
15 7.0 3.0 200 100 -65 to +100
300 4.0
150
2.0
Unit
Vdc Vdc Vdc mAdc °c °c
mW mW/oC
mW mW/oC
SWITCHING TIME TEST CIRCUIT
Vcc= -lO.3V
+l.2::'tf-__ V"
-5.5V
INPUT PULSE
tt,.::"='":
1 1
ns ns
PW~200ns
1 KIl
I~--------~---------oVoo, OSCILLOSCOPE RISE TIME"", 1 ns I _.1._ TOTAL COLLECTOR SHUNT ,~, C, CAPACITANCE"" 6 pF I I I ~
2-142
2N985 (continued)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Collector-Base Breakdown Voltage (IC = 100 !lAdC, IE = 0)
Collector-Emitter Breakdown Voltage (IC = 5 mAde, IB = 0)
Col.