transistors. 2N998 Datasheet

2N998 Datasheet PDF


Part 2N998
Description Darlington amplifier containing two NPN silicon annular transistors
Feature 2N998 (SILICON) Darlington amplifier containing two NPN silicon annular transistors is designed for.
Manufacture Motorola
Datasheet
Download 2N998 Datasheet


2N998 Datasheet
2N998 CASE 20-03, STYLE 8 T072 (TO206AF) DARLINGTON TRANSIS 2N998 Datasheet
2N998 (SILICON) Darlington amplifier containing two NPN sil 2N998 Datasheet
2N998A Datasheet




2N998
2N998 (SILICON)
Darlington amplifier containing two NPN silicon an-
nular transistors is designed for applications requiring
very high-gain, low-noise, and high-input impedance.
CASE 20(8)
(TO·72)
B,
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating Junction Temperature
Storage Temperature Range
Symbol
VCEO
VCB
VEB
IC
Po
Po
TJ
Tstg
2N998
60
100
15
500
0.5
2.86
1.8
10.3
+200
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
watt
mW/oC
Watts
mW/oC
°c
°c
2-146



2N998
2N998 (continued)
ELECTRICAL CHARACTERISTICS CT. = 2O'C ..Ie.. oth....'.......)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Yoltage 111
(Ie = 30 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(Ie = 100 "Ade, IE = 0)
Symbol
BYCEO(sus)
BYCBO
Min
60
100
Max
-
-
Emitter-Base Breakdown Voltage
(IE = 10.0 "Ade, IC = 0)
Collector Cutoff Current
(YCB = 90 Yde, IE = 0)
(YCB = 90 Yde, IE = 0, TA = 150oC)
Emitter Cutoff Current
(YBE = 10 Yde, IC = 0)
ON CHARACTERISTICS
DC Current Gain ~ "
(Ie = 1 mAde, YCE = 5 Yde)
(Ie = 10 mAde, YCE = 5 Yde)
(IC = 100 mAde, YCE = 5 Yde)
(Ie = 10 mAde, YCE = 5 Vde, measured
across each transistor within the device)
BYEBO
ICBO
lEBO
hFE
15
-
-
-
600
1,600
2,000
25
-
0.01
15
0.01
-
8,000
-
-
DYNAMIC CHARACTERISTICS
Output Capacitance
(YCB = 10 Yde, IE = 0, r = 140 kHz)
-Cob
30
Input Capacitance
(YBE = 0.5 Yde, Ie = 0, r = 140 kHz)
-Clb
50
Small-Signal CUrrent Gain
(Ie = 1 mAde, YCE = 5 Vdc, f = 1 kHz)
-hre
1,000
NOise Figure-"
(Ic = 0.1 mAde, YCE = 10 Yde, RS = 5 kQhms,
f = 1 kHz, Bandwidth = 200 Hz)
NF"
- 6.0
111 Pulse Test: Pulse Width = 300 "S, Duty Cycle = 1%
··Measured with constant current supply of 20 ItAdc connected to the emitter of the input transistor. (See Figure 1)
FIGURE 1- NOISE-FIGURE TEST CIRCUIT
Unit
Yde
Yde
Yde
"Ade
p.Adc
-
pF
pF
-
dB
2-147






@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)