2N998 (SILICON)
Darlington amplifier containing two NPN silicon annular transistors is designed for applications requir...
2N998 (SILICON)
Darlington amplifier containing two NPN silicon annular transistors is designed for applications requiring very high-gain, low-noise, and high-input impedance.
CASE 20(8)
(TO·72)
B,
MAXIMUM RATINGS
Rating Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage Collector Current Total Device Dissipation @ TA = 25°C
Derate above 25°C Total Device Dissipation @ TC = 25°C
Derate above 25°C Operating Junction Temperature Storage Temperature Range
Symbol VCEO VCB VEB IC Po
Po
TJ Tstg
2N998
60 100 15 500 0.5 2.86 1.8 10.3 +200 -65 to +200
Unit
Vdc Vdc Vdc mAdc watt mW/oC Watts mW/oC °c °c
2-146
2N998 (continued)
ELECTRICAL CHARACTERISTICS CT. = 2O'C ..Ie.. oth....'.......)
Characteristic
OFF CHARACTERISTICS Collector-Emitter Sustaining Yoltage 111
(Ie = 30 mAdc, IB = 0)
Collector-Base Breakdown
Voltage
(Ie = 100 "Ade, IE = 0)
Symbol
BYCEO(sus) BYCBO
Min
60 100
Max
-
-
Emitter-Base Breakdown
Voltage (IE = 10.0 "Ade, IC = 0)
Collector Cutoff Cu...
