2P4M
®
2P4M
Pb Free Plating Product
Pb
2.0 Ampere Passivated Process Thyristor---Sensitive Gate SCR
DESCRIPTION:
Th...
2P4M
®
2P4M
Pb Free Plating Product
Pb
2.0 Ampere Passivated Process Thyristor---Sensitive Gate SCR
DESCRIPTION:
ThinkiSemi 2P4M SCR with the parallel resistor between Gate and Cathode are especially recommended for use on straight hair, igniter, anion generator etc..
MAIN FEATURES
TO-202 Pkg Outline
Symbol
Value
IT(RMS) IGT VTM
2 ≤200 ≤1.5
ABSOLUTE MAXIMUM RATINGS
Unit A μA V
Internal structure
A(2)
K(1)
RGK G(3)
3 2 1
Parameter Storage junction temperature range Operating junction temperature range Repetitive peak off-state
voltage Repetitive peak reverse
voltage
Symbol Tstg Tj VDRM VRRM
Value -40-150 -40-110
600 600
Unit ℃ ℃ V V
RMS on-state current
@ (TC=72℃) IT(RMS)
2
A
Non repetitive surge peak on-state current (tp=10ms) I2t value for fusing (tp=10ms)
Critical rate of rise of on-state current Peak gate current (tp=20μs, Tj=110℃) Peak gate power (tp=20μs, Tj=110℃) Average gate power dissipation(Tj=110℃)
ITSM I2t dI/dt IGM PGM PG(AV)
2...
