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2PD601ART

NXP

100mA NPN general-purpose transistor

2PD601ART 50 V, 100 mA NPN general-purpose transistor Rev. 01 — 15 March 2007 Product data sheet 1. Product profile ...


NXP

2PD601ART

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Description
2PD601ART 50 V, 100 mA NPN general-purpose transistor Rev. 01 — 15 March 2007 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: 2PB709ART. 1.2 Features I General-purpose transistor I Small SMD plastic package 1.3 Applications I General-purpose switching and amplification 1.4 Quick reference data Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain Conditions open base VCE = 10 V; IC = 2 mA Min Typ Max Unit - - 50 V - - 100 mA 210 - 340 2. Pinning information Table 2. Pin 1 2 3 Pinning Description base emitter collector Simplified outline Symbol 33 12 1 2 sym021 NXP Semiconductors 2PD601ART 50 V, 100 mA NPN general-purpose transistor 3. Ordering information Table 3. Ordering information Type number Package Name Description 2PD601ART - plastic surface-mounted package; 3 leads Version SOT23 4. Marking Table 4. Marking codes Type number 2PD601ART [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Marking code[1] C3* Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min VCBO VCEO VEBO IC ICM IBM Ptot Tj Tamb Tstg collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collect...




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