isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -150V (Min) ·Compleme...
isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown
Voltage-
V(BR)CEO= -150V (Min) ·Complement to Type 2SC2481 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Color TV vertical deflection output applications. ·Color TV class B sound output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
-150
V
VCEO Collector-Emitter
Voltage
-150
V
VEBO
Emitter-Base
Voltage
-6
V
IC
Collector Current-Continuous
-1.5
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-1.0
A
1.2 W
20
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SA1021
isc website:www.iscsemi.com
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isc Silicon PNP Power Transistor
2SA1021
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= -10mA; IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= -500mA; IB= -50mA
VBE(on) Base-Emitter On
Voltage
IC= -5mA; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE
DC Current Gain
IC= -200mA; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -200mA; VCE= -5V
COB
Output Capacitance
IE= 0 ; VCB= -10V;f= 1.0MHz
MIN TYP. MAX UNIT
-150
V
-1.5
V
-0.8
V
-1.0 μA
-1.0 μA
60
320
15
50
MHz
35
...