isc Silicon PNP Power Transistor
2SA1043
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -120V(Min) ·...
isc Silicon PNP Power Transistor
2SA1043
DESCRIPTION ·High Collector-Emitter Breakdown
Voltage-
V(BR)CEO= -120V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SC2433 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power switching applications ·power amplifier ·DC-DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-120
V
VCEO
Collector-Emitter
Voltage
-120
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-30
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-10
A
150
W
175
℃
Tstg
Storage Temperature Range
-65~175
℃
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isc Silicon PNP Power Transistor
2SA1043
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= -10mA; RBE= ∞
-120
V
V(BR)CBO Collector-Base Breakdown
Voltage
IC= -50μA; IE= 0
-120
V
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= -1mA ; IC= 0
-5
V
VCE(sat) Collector-Emitter Saturation
Voltage IC= -15A; IB= -1.5A
-1.5 V
VBE(sat) Base-Emitter Saturation
Voltage
IC= -15A; IB= -1.5A
-2.0 V
ICBO
Collector Cutoff Current
VCB= -120V ; IE= 0
-50 μA
ICEO
Collector Cutoff Current
VCE= -120V ; IE= 0
-1 mA
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
...
