2SA1050

isc Silicon PNP Power Transistor 2SA1050 DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min.) ·Complement to Type 2SC2460 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifer and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -12 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -140V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -1A ; VCE= -5V fT Current-Gain—Bandwidth Product IC= -1A ; VCE= -10V  hFE Classifications R O Y 55-110 80-160 120-240 2SA1050 MIN TYP. MAX UNIT -140 V -140 V -5 V -2.0 V -10 μA -10 μA 55 240 70 MHz Notice： ISC reserves the rights t...