2SA1075

isc Silicon PNP Power Transistor 2SA1075 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2525 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·switching regulators ·DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 120 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1075 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter –Base Breakdown Voltage IC=- 50uA ; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC=- 1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC=- 50uA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current ICEO Collector Cutoff Current VCB= -120V; IE= 0 VCE= -120V; REB=∞ IEBO Emitter Cutoff Current VEB= -7V; IC=0 hFE-1 DC Current Gain IC=-1A; VCE= -5V hFE-2 DC Current Gain IC= - 7A; VCE= -5V COB Output Capacitance IE= 0; VCB= -10V;ftest= 1.0MHz fT Current-Gain—Bandwidth Product IE= -1A; VCE= ...