:
2SA1094
I
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES • High Breakdown Voltage :...
:
2SA1094
I
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES High Breakdown
Voltage : VcE0=~140V High Transition Frequency : fx=70MHz (Typ.) Complementary to 2SC2564. Recommended for 80W High-Fidelity Audio Frequency Amplifier Output Stage.
Unit in mm
MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC
Collector-Base
Voltage Collector-Emitter
Voltage
Emitter-Base
Voltage
Collector Current Emitter Current Collector Power .Dissipation
CTc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VcBO v CEO VEBO ic IE
RATING UNIT -140 -140 -5 -12 12
PC
Ti -stg
120 150 -55^150
°C
1. BASE 2. COLLECTOR(HEAT SINK) 3. EMITTER
2 - 34 A 1 A Weight : 10. 8g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Col lee tor- Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage
DC Current Gain
Collector- Emitter Saturation
Voltage Base-Emitter
Voltage Transition Frequency Collector Output Capaci...
