2SA1162

2SA1162 Silicon PNP Epitaxial Type Transistor Features High voltage and high current: VCEO = -50 V, IC = 150 mA (max) Low noise: NF = 1dB (typ.), 10dB (max) Small package RoHS compliant package Mechanical Data Case: Molded plastic Epoxy: UL94-V0 rate flame retardant Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [2SA1162] © Bruckewell Technology Corporation Rev. A -2014 2SA1162 Silicon PNP Epitaxial Type Transistor MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATING @ Ta=25°C unless otherwise specified Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current IB Base Current PC Collector Dissipation Tj Junction Temperature Tstg Storage Temperature Range Value -50 -50 -5 -150 -30 150 125 -55 to +125 Unit V V V mA mA mW °C °C ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified Symbol Parameter Test Conditions...