2SA1235A

Production specification Silicon Epitaxial Planar Transistor FEATURES  Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA). Pb Lead-free  Excellent lineary DC forward current gain.  Super mini package for easy mounting. 2SA1235A APPLICATIONS  PNP epitaxial type transistor designed for low frequency.  Voltage amplify application. ORDERING INFORMATION Type No. Marking 2SA1235A ME/MF/MG SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature -50 -50 -6 -200 150 -55 to +125 Units V V V mA mW ℃ C094 Rev.A www.gmesemi.com 1 Production specification Silicon Epitaxial Planar Transistor 2SA1235A ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditio...