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2SA1430

Toshiba Semiconductor

Silicon PNP Epitaxial Type Transistor


Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1430 Strobe Flash Applications Medium Power Amplifier Applications 2SA1430 Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A) Low saturation voltage: VCE (sat) = −0.5 V (max) (IC...



Toshiba Semiconductor

2SA1430

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