SMD Type
PNP Silicon Epitaxia 2SA1463
Transistors IC
Features
High speed,high voltage switching. Low Collector Saturat...
SMD Type
PNP Silicon Epitaxia 2SA1463
Transistors IC
Features
High speed,high
voltage switching. Low Collector Saturation
Voltage
Absolute Maximum Ratings Ta = 25
Parameter Collector to base
voltage Collecto to emitter
voltage Emitter to base
voltage Collector current(DC) Collector current(Pulse)* Total power dissipation Junction temperature Storage temperature *.pw 10 ms,Duty Cycle 50% Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating -60 -45 -5.0 -1.0 -2.0 20 150 -55 to +150 Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation
voltage * Base-emitter saturation
voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time * Pulse test: tp 350 ìs; d 0.02. Symbol ICES IEBO hFE1 hFE2 Testconditons VCE = -45V, RBE=0 VEB = -4V, IC=0 VCE = -10V , IC = -50mA VCE = -10V , IC = -500mA 60 60 -0.26 -0.98 300 400 11 25 IC = -500mA , IB1 = IB1 = -50mA 46 62 25 40 70 100 -0.6 -1.2 V V MHz pF ns ns ns Min Typ Max -0.5 -0.5 200 Unit ìA ìA
VCE(sat) IC = -500mA , IB = -50mA VBE(sat) IC = -500mA , IB = -50mA fT Cob ton tstg toff VCE = -10V , IE = 100mA VCB = -10V , IE = 0 , f = 1.0MHz
hFE Classification
Marking hFE 1L 60 120 1K 100 200
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