isc Silicon PNP Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 70(Min)@ (VCE= -2V, IC= -1A) ·Low Saturation Volt...
isc Silicon PNP Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 70(Min)@ (VCE= -2V, IC= -1A) ·Low Saturation
Voltage-
: VCE(sat)= -0.4V(Max)@ (IC= -2.5A, IB= -0.125A) ·Fast Switching Time ·Complement to Type 2SC3746 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Various inductance lamp drivers for electrical equipment ·Inverters, converters (strobo, flash, fluorescent lamp
lighting circuit). ·Power amp(high power car stereo, motor controller). ·High-speed switching (switching regulator, driver).
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-80
V
VCEO
Collector-Emitter
Voltage
-60
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-7
A
2 W
20
150
℃
Tstg
Storage Temperature
-55~150 ℃
2SA1469
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= -10mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown
Voltage
IC= -1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= -1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= -2.5A; IB= -0.125A
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cut...