2SA1484

2SA1484 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1484 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –90 –90 –5 –100 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –90 –90 –5 — — 1 Typ — — — — — — — — Max — — — –0.1 –0.1 800 –0.15 –1.0 Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –70 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA*2 I C = –10 mA, IB = –1 mA*2 I C = –10 mA, IB = –1 mA*2 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage V(BR)EBO I CBO I EBO hFE* 250 — — VCE(sat) VBE(sat) V V Notes: 1. The 2SA1484 is grouped by h FE as follows. 2. Pulse test Grade Mark hFE D IRD 250 to 500 E IRE 400 to 800 2 2SA1484 Maximum Collector Dissipation Curve Collector power dissipation Pc (mW) 150 Collector Current IC (mA) Typical Output Characteristics (1) –20 –3 0 –2 5 –16 100 –12 –20 PC mW 50 =1 –15 –8 50 –10 –4 –5 µA IB = 0 0 50 100 150 Ambient Temper...