2SA1485
Silicon PNP Epitaxial
Application
Low frequency amplifier
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3...
2SA1485
Silicon PNP Epitaxial
Application
Low frequency amplifier
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SA1485
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –200 –200 –5 –100 200 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown
voltage Symbol V(BR)CBO Min –200 –200 –5 — 100 — — Typ — — — — — — — Max — — — –500 250 –0.5 –1.0 V V Unit V V V µA Test conditions I C = –10 µA, IE = 0 I C = –0.5 mA, RBE = ∞ I E = –10 µA, IC = 0 VCE = –200 V, RBE = ∞ VCE = –12 V, IC = –2 mA*1 I C = –30 mA, IB = –3 mA*1 VCE = –12 V, IC = –2 mA*1
Collector to emitter breakdown V(BR)CEO
voltage Emitter to base breakdown
voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation
voltage Base to emitter
voltage Note: 1. Pulse test V(BR)EBO I CEO hFE VCE(sat) VBE
2
2SA1485
Maximum Collector Dissipation Curve Collector power dissipation PC (mW) 300 Collector current IC (mA) Typical Output Characteristics –100
–1
–80
0
–5
.0
–2. 0
PC = 0 20
200
–1.0
–0.5
m
–60
W
–40
–0.2 –0.1 mA
100
–20 IB = 0
Ta = 25°C
0
50 100 150 Ambient Temperature Ta (°C)
0
–1 –2 –3 –4 –5 Collector to Emitter
Voltage VCE (V)
Typical Transfer Characteristics –100 DC current transfer ratio hFE –50 ...