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2SA1615-Z Transistor Datasheet PDF

PNP Transistor

PNP Transistor

 

 

 

Part Number 2SA1615-Z
Description PNP Transistor
Feature P TYPE TTANSISTORS -10A 2SA1615, 1615-Z The 2SA1615 and 1615-Z are available for the large current control in small due to the low saturation and are ideal for high-efficiency DC/DC converters d ue to the fast switching speed.
PIN CO NFIGURATION 2SA1615 2SA1615-Z FEATURE Large current capacity: Ic(DC): -10A, I c(pulse) : -15A High hFE and low collec tor saturation voltage : hFE = 200 MIN (@Vec = -2V, Ic = -0.
5A) VCE(sat) ¡Ø -0.
25V (@Ic = -4.
0A, IB = -0.
05A) 1.
Ba se 2.
Collector 3.
Emitter ABSOLUTE MAXI MUM RATINGS (Ta = 25¢J www.
DataSheet4U .
com ) RATINGS -30 -20 -10 -10 -15 -0.
5 1.
0 15 150 -55 .
Manufacture Stanson Technology
Datasheet
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Part Number 2SA1615-Z
Description PNP Silicon Transistor
Feature DATA SHEET SILICON POWER TRANSISTORS 2 SA1615, 1615-Z PNP SILICON EPITAXIAL TR ANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for th e large current control in small dimens ion due to the low saturation and are i deal for high-efficiency DC/DC converte rs due to the fast switching speed.
FE ATURES
• Large current capacity: IC(D C): −10 A, IC(pulse): −15 A
• Hig h hFE and low collector saturation volt age: hFE = 200 MIN.
(@VCE = −2.
0 V, I C = −0.
5 A) VCE(sat) ≤ −0.
25 V (@ IC = −4.
0 A, IB = −0.
05 A) QUALITY GRADES
• Standard Please refer to Quality Grades on NEC Semiconductor D .
Manufacture NEC
Datasheet
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Part Number 2SA1615-Z
Description Silicon PNP Power Transistor
Feature isc Silicon PNP Power Transistor 2SA161 5-Z DESCRIPTION ·Large current capaci ty:IC(DC)= -10A IC(pulse)=-15A ·High h FE and low saturation voltage: hFE= 200 min (VCE=-2V,IC=-0.
5A) VCE(sat)≤-0.
25 V (IC=-4A,IB=-0.
05A) ·100% avalanche t ested ·Minimum Lot-to-Lot variations f or robust device performance and reliab le operation APPLICATIONS ·The 2SA161 5 is available for the large current co ntrol in small dimension due to the low saturation and is ideal for high effic iency DC/AC converters due to the fast switching speed ABSOLUTE MAXIMUM RATIN GS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- .
Manufacture Inchange Semiconductor
Datasheet
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